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Qualcomm Snapdragon 835 with Quick Charge 4 announced: 10nm FinFet chipset built by Samsung

Qualcomm has announced the Snaprdragon 835 chipset, which is the successor to its current gen flagship SoCs the Snapdragon 820 and the 821.

Qualcomm Snapdragon 835
But unlike its successors, which use a 14nm (nanometer) process technology, the Snapdragon 835 uses 10nm FinFET (Fin Field Effect Transistor) process, and is the first mobile chipset to do so.

As to why Qualcomm skipped on the Snapdragon 825, or Snapdragon 830 chipsets, we have no idea. Qualcomm has not released the full technical specifications of the Snapdragon 835 chipset, but here is what we gathered from the announcement.

The Snapdragon 835 10nm processors were built by a joint effort by Qualcomm and Samsung. So hopefully, we will see better performance in the 835, than the sub-par 820/821 which were outshined by Samsung's Exynos 8890, Huawei's Kirin 950, and of course Apple's A10 Fusion. Qualcomm's official announcement says that the Snapdragon 835 processors will consume less power (40% lesser),  while delivering up to 27% improvement over the 820 and 821.

Quick Charge 4 

Quick Charge 4.0

The Snapdragon 835 are pretty small in size, and this allows OEMs to use the extra space for including larger batteries or making phones with slimmer designs. Speaking of batteries, the Snapdragon 835 comes with Quick Charge 4 with support for USB Type-C, which is 20% faster than Quick Charge 3.0, and 30 percent more efficient, and also reduces temperature spikes, because it charges up to 5° C cooler. Qualcomm says that because of Quick Charge 4, a 5 minute charge can deliver 5 hours or more of battery life, and that it can charge a phone from 0 to 50 percent in about 15 minutes or less.

The Qualcomm Snapdragon 835 is in production now, and will be powering devices, which are launched in the first half of 2017. This is a strong hint that the Next Galaxy, the Samsung Galaxy S8 and the Galaxy S8 will feature the Snapdragon 835 chipsets.